View 2SK339706_4125569.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3397
Relay Drive and DC-DC Converter Applications Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 20 70 210 125 273 70 12.5 150 -55 to150 Unit V V V A W mJ A mJ C C
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-97 2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit C/W
Circuit Configuration
4
Note 1:
Ensure that the channel temperature does not exceed 150C.
1
Note 2: VDD = 25 V, Tch = 25C (initial), L = 40 H, IAR = 70 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2006-11-16
2SK3397
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 24 V, VGS = 10 V, ID = 70 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 4.7 ID = 35 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 35 A VDS = 10 V, ID = 35 A Min 30 15 1.5 55 VDD 15 V - Typ. 4.0 110 5000 550 1000 8.0 25 48 180 110 87 23 Max 10 10 3.0 6.0 ns nC pF Unit A A V V m S
RL = 0.43
Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 30 A/s Min Typ. 40 40 Max 70 210 -1.7 Unit A A V ns nC
Marking
Part No. (or abbreviation code)
K3397
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-16
2SK3397
ID - VDS
100 10 4.5 8 60 5 40 3.5 6 4 3.75 Common source Tc = 25C Pulse Test 100 10 80 8 6 4 5 4.5 3.75
ID - VDS
Common source Tc = 25C Pulse Test
80
(A)
ID
ID
(A)
60
3.5
Drain current
Drain current
40 3.25 20 VGS = 3 V 0
20
3.25 VGS = 3V 0 0.2 0.4 0.6 0.8 1.0
0
0
1
2
3
4
5
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
120 Common source VDS = 10 V Pulse Test 1.2
VDS - VGS
Common source Tc = 25 Pulse Test
ID (A)
80
VDS
Tc = -55C 100 25
(V) Drain-source voltage
100
1.0
0.8
Drain current
60
0.6
40
0.4 35 15
ID = 70 A
20
0.2
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
1000 100 Common source Tc = 25C Pulse Test
RDS (ON) - ID
Forward transfer admittance Yfs (S)
100 100 25
Drain-source ON resistance RDS (ON) (m)
Tc = -55C
10 VGS = 10,15V
10
Common source VDS = 10 V Pulse Test 1 1 10 100 1000
1 1 10 100
Drain current ID (A)
Drain current ID (A)
3
2006-11-16
2SK3397
RDS (ON) - Tc
20 Common source VGS = 10 V Pulse Test 1000
IDR - VDS
16
Drain reverse current IDR (A)
10 100
5
Drain-source ON resistance RDS (ON) (m)
12
8 ID = 15,35A 4
70
3 10
VGS = 0, -1 V Common source Tc = 25C Pulse Test -0.8 -1.2 -1.6 -2.0
1 0 -80 -40 0 40 80 120 160 1 0 -0.4
Ambient temperature Ta (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 Ciss 4 5
Vth - Tc
Common source VDS = 10 V ID = 1mA Pulse Test
Gate threshold voltage Vth (V)
(pF)
Capacitance C
3
1000
Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25C
2
1
100 0.1
1
10
100
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Ambient temperature Ta (C)
PD - Tc
200 50
Dynamic input / output characteristics
25 Common source 40 Tc = 25C Pulse Test 30 6 20 VDS 12 VDD = 24V 10 VGS 15 20 ID = 70 A
Drain power dissipation PD (W)
150
VDS
100
50
Drain-source voltage
10
5
0 0 40 80 120 160 200
0
0
40
80
120
160
0 200
Ambient temperature Ta (C)
Total gate charge Qg (nC)
4
2006-11-16
Gate-source voltage
VGS (V)
(V)
2SK3397
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1
Duty=0.5 0.2 0.1 PDM SINGLE PULSE t T Duty = t/T Rth (ch-c) = 1.0C/W 1m 10m 100m 1 10
0.1 0.05 0.01 0.01 10 0.02
100
Pulse width
tw (s)
SAFE OPERATING AREA
1000 500
EAS - Tch
ID max (pulse) * ID max (continuous) 100 s *
EAS (mJ) Avalanche energy
400
100
300
Drain current ID (A)
1 ms * DC OPEATION Tc = 25C
200
10
100
1
Single pulse Ta=25 Curves must be derated linearly with increase in temperature. 1
0 25
50
75
100
125
150
Channel temperature (initial)
Tch (C)
VDSS max 10 100
0. 1 0. 1
15 V -15 V
BVDSS IAR VDD Test circuit Wave form VDS
Drain-source voltage
VDS (V)
RG=25 VDD = 25 V, L = 40H
AS =
1 B VDSS L I2 B 2 - VDD VDSS
5
2006-11-16
2SK3397
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-16

▲Up To Search▲

Price & Availability of 2SK339706

	To Download 2SK339706 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .